Silicon Carbide and Diamond
Silicon Carbide (SiC) is a wide-bandgap semiconductor already widely used for electronic and photonic devices and hosts a number of colour centres.
- Growth of diamond – SiC composite layers
- Detailed composition and mechanical properties study
- Enhanced scratch resistivity of layers
Comparative studies (nanoindentation and micro-scratch tests) of the mechanical properties of composite diamond/silicon carbide and diamond layers deposited by a microwave plasma enhanced chemical vapour deposition (CVD) system with linear antennas, show that composite layers have significantly superior scratch resistivity.
Chemical and structural characterisation show that the composite layer consists of a mixture of large boron doped nano-crystalline diamond crystals embedded in a fine silicon carbide (SiC) grain matrix. The enhanced durability of these new layers is attributed to boron incorporation and to possible improved stress redistribution and accommodation mechanics coming from the nanocomposite structure combination of silicon carbide and nano-crystalline diamond.
For full article: https://doi.org/10.1016/j.jallcom.2019.06.016
Authors: A. Taylor, L. Klimša, J. Kopeček, Z. Remeš, M. Vronka, R. Čtvrtlík, J. Tomáštík, V. Mortet
Silicon Carbide (SiC) is a wide-bandgap semiconductor already widely used for electronic and photonic devices and hosts a number of colour centres.
Why the physical & chemical properties of wide bandgap semiconductors —silicon carbide & diamond are ideal for device fabrication, for application in many different areas
- Growth of diamond–SiC composite layers - Detailed composition and mechanical properties study - Enhanced scratch resistivity of layers
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